New Application of Variable-Pressure/Environmental Microscopy to Semiconductor Inspection and Metrology

Scanning

Volumn 26, Issue 1, 2004, Pages 11-17

  Postek, Michael T ^a   Vladár, András E ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension; Environmental microscopy; High pressure; Metrology; Scanning electron microscopy; Variable pressure

Indexed keywords

PHASE SHIFT; PHOTORESISTORS; SCANNING ELECTRON MICROSCOPY;

PHOTOMASKS; PHOTORESIST STRUCTURES;

SEMICONDUCTOR MATERIALS;

CHROMIUM; SILICON DIOXIDE;

ACCURACY; ARTICLE; ELECTRON BEAM; ENVIRONMENTAL MICROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAS; IMAGING SYSTEM; IRRADIATION; METHODOLOGY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 1242296379     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950260103     Document Type: Article

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