Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

Materials Science in Semiconductor Processing

Volumn 2, Issue 1, 1999, Pages 13-18

  Okamoto, Naoya ^a   Tanaka, Hitoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; FERMI LEVEL; FILM GROWTH; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PASSIVATION; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

ZINCBLENDE PHASE;

SEMICONDUCTING FILMS;

EID: 0032662078     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00051-1     Document Type: Article

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