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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7376-7378

Time Integrated/Resolved Photoluminescence of ZnO Films Deposited on Sapphire and GaAs

(3) Sohn, Kee Sun a Hwang, Deuk Kyu b Myoung, Jae Min b

a Sunchon National University (South Korea)

b Yonsei University (South Korea)

Author keywords

MOCVD; Photoluminescence; TIPL; TRPL; ZnO film

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; CRYOGENICS; EMISSION SPECTROSCOPY; EXCITONS; HALL EFFECT; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PHOTONS; PUMPING (LASER); RADIATION COUNTERS; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

TIME INTEGRATED PHOTOLUMINESCENCE (TIPL); TIME RESOLVED PHOTOLUMINESCENCE (TRPL); ZNO FILMS;

ZINC OXIDE;

EID: 1242287992 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.7376 Document Type: Article

Times cited : (3)

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