Structural and optical properties of epitaxial and bulk ZnO

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2078-2080

  Zeuner, A ^a   Alves, H ^a   Hofmann, D M ^a   Meyer, B K ^a   Heuken, M ^b   Blasing J ^c   Krost, A ^c  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; DONOR AND ACCEPTOR; FREE-EXCITON EMISSIONS; GAN TEMPLATE; HALF-WIDTH; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; HOMOEPITAXIAL; MOSAIC STRUCTURE; RECOMBINATION LINES; ROCKING CURVES; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; VAPOR PHASE DEPOSITION; ZNO; ZNO FILMS; ZNO SINGLE CRYSTALS; ZNO SUBSTRATE; ZNO THIN FILM;

CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; METALLIC FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 79956028207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464218     Document Type: Article

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