Single Event Upset and Hardening in 0.15 μm Antifuse-Based Field Programmable Gate Array

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2158-2166

  Wang, J J ^a   Wong, W ^a   Wolday, S ^a   Cronquist, B ^a   McCollum, J ^a   Katz, R ^b   Kleyner, I ^c  

^a Actel Corp   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Antifuse; Device simulation; FPGA; Radiation hardening; Single event effect (SEE); Single event upset (SEU)

Indexed keywords

COMPUTER SIMULATION; FLIP FLOP CIRCUITS; HEAVY IONS; ION BEAMS; LOGIC CIRCUITS; PRODUCT DESIGN; RADIATION HARDENING; STATIC RANDOM ACCESS STORAGE;

ANTIFUSE; DEVICE SIMULATION; SINGLE EVENT EFFECT (SEE); SINGLE EVENT UPSET (SEU);

FIELD PROGRAMMABLE GATE ARRAYS;

EID: 1242287915     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.822090     Document Type: Conference Paper

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