The effects of architecture and process on the hardness of programmable technologies

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1736-1743

  Katz, R ^a,b   Wang, J J ^a   Reed, R ^a   Kleyner, ^a   D'Ordine, M ^a   McColtum, J ^b  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC RANDOM ACCESS MEMORY; HIGH ENERGY IONS; PROGRAMMABLE MICROCIRCUITS; SHALLOW TRENCH ISOLATION; SINGLE EVENT LATCHUP;

FERROELECTRIC DEVICES; HEAVY IONS; INTEGRATED CIRCUIT LAYOUT; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

RADIATION HARDENING;

EID: 0033331369     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819147     Document Type: Article

References (7)

1. P.E. Dodd, O. Musseau, M.R. Shaneyfelt, F.W. Sexton, C. D'hose, G.G. Hash, M. Martinez, R.A. Loemker, J.L. Leray, P.S. Winokur, "Impact of Ion Energy on Single Event Upset," IEEE Transactions on Nuclear Science, NS-4S. pp. 2483-2491 (1998).
2. R. Koga, S.H. Grain, W.R. Grain, S.H. Hansel, "Comparative SEU Sensitivities to Relativistic Heavy Ions," IEEE Transactions on Nuclear Science, NS-45. pp. 2475-2482 (1998).
3. FMI 608, 64Kb Bytewide FRAM Memory Datasheet, RAMTRON Corporation, January 6,1999.
4. R, Katz, J.J, Wang, R. Koga, K.A. LaBel, J. McCollum, R. Brown, R.A. Reed, B. Cronquist, S. Grain, T. Scott, W. Paolini, B. Sin, "Current Radiation Issues for Programmable Elements and Devices," IEEE Transactions on Nuclear Science, NS-45. pp, 2600-2610(1998).
5. J, Barth, "Modeling Space Radiation Environments," Short Course, IEEE Nuclear Space Radiation Effects Conference, Snowmass Village, Colorado, 1997.
6. MR. Shaneyfelt, P.E. Dodd, B.L. Draper, R.S, Flores, "Challenges in Hardening Technologies Using Shallow-Trench Isolation," IEEE Transactions on Nuclear Science, NS-45. pp. 2584-2592 (1998).
7. K.A. LaBeJ, P.W. Marshall, J.L. Earth, R.B. Katz, R.A. Reed, H.W, Leidecker, H.S. Kirn, C.J. Marshall, "Anatomy of an Inflight Anomaly: Investigation of Proton-Induced SEE Test Results for Stacked IBM DRAMs," IEEE Transactions on Nuclear Science, NS-45. pp. 2898-2903 (1998).