Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The current-voltage characteristics

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 519, Issue 3, 2004, Pages 532-544

  Dehimi, L ^a   Sengouga, N ^a   Jones, B K ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Diode; Modelling; Radiation damage; Semi conductor; Semi insulating

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; FERMI LEVEL; IRRADIATION; MATHEMATICAL MODELS; RADIATION DAMAGE; RELAXATION PROCESSES;

SCHOTTKY DIODES; SEMI-INSULATING MATERIALS;

SEMICONDUCTOR DIODES;

EID: 1242287621     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.10.088     Document Type: Article

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