Semi-insulating GaAs as a relaxation semiconductor

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7699-7705

  Santana, J ^a,b   Jones, B K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b Instituto Tecnologico y de Estudios Superiores de Occidente   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; FERMI LEVEL; LIQUID PHASE EPITAXY; NEUTRON IRRADIATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

CAPACITANCE VOLTAGE FREQUENCY; RELAXATION SEMICONDUCTOR;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032099581     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367941     Document Type: Article

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