Carrier lifetime measurements in 10kV 4H-SiC diodes

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 689-691

  Levinshtein, M E ^a   Mnatsakanov, T T ^b   Ivanov, P A ^a   Singh, R ^c   Irvine, K G ^c   Palmour, J W ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; SILICON CARBIDE;

CURRENT RECOVERY TIME (CRT);

SEMICONDUCTOR DIODES;

EID: 0037666281     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030449     Document Type: Article

References (12)

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