The foundations of the EKV MOS transistor charge-based model

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 666-669

  Enz, Christian ^a,b   Bucher, M ^c   Porret, A S ^d   Sallese, J M ^b   Krummenacher, F ^b  

^a CSEM   (Switzerland)

^b EPFL   (Switzerland)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^d Xceive Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); PERMITTIVITY; SILICON; THERMODYNAMICS; TRANSCONDUCTANCE;

CHARGE DENSITY; DRAIN CURRENTS; GATE VOLTAGES; SILICON PERMITTIVITY;

MOSFET DEVICES;

EID: 0013084791     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. A. I. A. Cunha, M. G. Schneider, and C. Galup-Montoro, "An Explicit Physical Model for Long-Channel MOS Transistor Including Small-Signal Parameters," Solid-State Elec., vol. 38, no. 11, pp. 1945-1952, 1995.
2. m/I Based MOSFET Model," Proc. of the Int. Semiconductor Device Res. Symp., Dec. 1997.
3. A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro, "An MOS Transistor Model for Analog Circuit Design," IEEE J. of Solid-State Circ., vol. 33, no. 10, pp. 1510-1519, Oct. 1998.
4. M. Bucher, J.-M. Sallese, C. Lallement, W. Grabinski, C. C. Enz, and F. Krummenacher, "Extended Charges Modeling for Deep Submicron CMOS," Proc. of the Int. Semiconductor Device Res. Symp., pp. 397-400, Dec. 1999.
5. C. C. Enz, F. Krummenacher, and E. A. Vittoz, "An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications," Analog Integrated Circuits and Signal Processing Journal, vol. 8, pp. 83-114, July 1995.
6. Y. Tsividis, Operation and Modeling of the MOS Transistor, Mc-Graw-Hill, 2nd edition, 1999.
7. J.-M. Sallese, M. Bucher, and C. Lallement, "Improved Analytical Modeling of Polysilicon Depletion in MOSFETs for Circuit Simulation," Solid-State Elec., vol. 44, no. 6, pp. 905-912, June 2000.
8. J.-M. Sallese, W. Grabinski, A.-S. Porret, M. Bucher, C. Lallement, F. Krummenacher, C. Enz, and P. Fazan, "Advancements in dc and RF MOSFET Modeling with The EPFL-EKV Charge-Based Model," Proc. of the 8th Int. Conf. on Mixed-Signal Design, June 2001.
9. M. Bucher, Analytical MOS Transistor Modelling for Analog Circuit Simulation, PhD Thesis No. 2114, EPFL, 1999.
10. J.-M. Sallese and A.-S. Porret, "A Novel Approach to Charge Based Non Quasi Static Model of the MOS Transistor Valid in All Modes of Operation," Solid-State Elec., vol. 44, no. 6, pp. 887-894, June 2000.
11. A.-S. Porret, J.-M. Sallese, and C. C. Enz, "A Compact Non Quasi-Static Extension of a Charge-Based MOS Model," IEEE Trans. on Elec. Dev., vol. 48, no. 8, pp. 1647-1654, Aug. 2001.
12. C. C. Enz, "A MOS Transistor Model for RF IC Design Valid in All Regions of Operation," IEEE Trans. on Microwave Theory and Techniques, 2002, accepted for publication.
13. M. Bucher, C. Enz, F. Krummenacher, J.-M. Sallese, C. Lallement, and A.-S. Porret, "The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects," WCM-MCM, April 2002, in this issue.