The heteroepitaxy of II-VI compounds on the non-isovalent substrates (ZnTe/Si)

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 203-209

  Sidorov, Yu G ^a   Yakushev, M V ^a   Pridachin, D N ^a   Varavin, V S ^a   Burdina, L D ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Heteroepitaxy of II VI compounds; Molecular beam epitaxy; Si(113):As substrates; Surfactant mediated epitaxy; ZnTe films

Indexed keywords

EID: 0007230337     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00674-X     Document Type: Article

References (12)

1. A. Million, N.K. Dhar, J.H. Dinan, J. Cryst. Growth 159 (1966) 76.
2. S. Rijirawat, L.A. Almeida, Y.P. Chen, S. Sivananthan, D.J. Smith, Appl. Phys. Lett. 71 (1997) 1810.
3. T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu, W.J. Hamilton, G.S. Kamath, J. Electrochem. Soc. 141 (10) (1994) 2888.
4. G. Yu, S.A. Sidorov, M.V. Dvoretsky, N.N. Yakushev, V.S. Mikhailov, V.I. Varavin, Liberman, Thin Solid Films 267 (1997) 253.
5. K. Maehashi, N. Morota, Y. Murase, N. Yasui, A. Shikimi, H. Nakashima, J. Cryst. Growth 201-202 (1999) 486.
6. K. Ploog, W. Stetter, A. Nowitzki, E. Schonherr, Mater. Res. Bull. 11 (1976) 1147.
7. J.P. Faurie, R. Sporken, Y.P. Chen, M.D. Lange, S. Sivananthan, Mater. Sci. Eng. B 16 (1993) 51.
8. R.I.G. Uhrberg, R.D. Bringans, A. Marjorie Olmstead, R.Z. Bachrach, Phys. Rev. B, 35 No. 8 (1987) 3945.
9. R.D. Bringans, D.K. Biegelsen, L.-E. Swartz, Phys. Rev. B 44 (7) (1991) 3054.
10. D.J. Chadi, Phys. Rev. Lett. 59 (1987) 1691.
11. O.L. Alerhand, W. Jing, J.D. Joannopoulos, E. Kaxiras, R.S. Becker, Phys. Rev. B 44 (1991) 6534.
12. V.A. Shvets, S.I. Chikichev, D.N. Pridachin, M.V. Yakushev, Yu.G. Sidorov, A.S. Mardehov, Thin Solid Films 313-314 (1998) 561.