Chemical composition of GaAs oxides grown by local anodic oxidation: A spatially resolved Auger study

Chemical Physics Letters

Volumn 402, Issue 1-3, 2005, Pages 155-159

  Lazzarino, M ^a   Padovani, M ^b   Mori, G ^a,c   Sorba, L ^a,d   Fanetti, M ^b   Sancrotti, M ^b  

^a INFM   (Italy)

^b UNIVERSITÀ CATTOLICA DEL SACRO CUORE   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS OXIDES; LOCAL ANODIC OXIDATION (LAO); OXIDE STRUCTURES;

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM;

ANALYTIC METHOD; ARTICLE; AUGER ELECTRON SPECTROSCOPY; CHEMICAL COMPOSITION; CHEMICAL REACTION; CHEMICAL STRUCTURE; OXIDATION; PHASE TRANSITION; REACTION ANALYSIS;

EID: 11444251563     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2004.12.019     Document Type: Article

References (22)

1. F. Pérez-Murano, K. Birkelund, K. Morimoto, and J.A. Dagata Appl. Phys. Lett. 75 1999 199
2. Y. Okada, S. Amano, M. Kawabe, and J.S. Harris J. Appl. Phys. 83 1998 7998
3. N.J. Curson, R. Nemutudi, N.J. Appleyard, M. Pepper, D.A. Ritchie, and G.A.C. Jones Appl. Phys. Lett. 78 2001 3466
4. G. Mori, M. Lazzarino, D. Ercolani, G. Biasiol, and L. Sorba J. Vac. Sci. Technol. B 22 2004 570
5. A. Fuhrer, S. Lusher, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, and M. Bichler Nature 413 2001 822
6. R. Klauser, I.H. Hong, H.J. Su, T.T. Chen, S. Gwo, S.C. Wang, T.J. Chuang, and V.A. Gritsenko Appl. Phys. Lett. 79 2001 3143
7. M. Lazzarino, S. Heun, B. Ressel, K.C. Prince, P. Pingue, and C. Ascoli Appl. Phys. Lett. 81 2002 2842
8. Y. Okada, Y. Iuchi, M. Kwabe, and J.S. Harris J. Appl. Phys. 88 2000 1136
9. D. Ercolani, M. Lazzarino, G. Mori, B. Ressel, L. Sorba, A. Locatelli, S. Cherifi, A. Ballestrazzi, S. Heun, Adv. Func. Mater. (2005) (in press)
10. A. Wiessner, J. Kirschner, G. Schaefer, and Th. Berghaus Rev. Sci. Instrum. 68 1997 3790
11. M. Padovani, E. Magnano, G. Bertoni, V. Spreafico, L. Gavioli, and M. Sancrotti Appl. Surf. Sci. 212-213 2003 213
12. A. Guillen-Cervantes, Z. Rivera-Alvarez, M. Lopez-Lopez, E. Lopez-Luna, and I. Hernandez-Calderon Thin Solid Films 373 2000 159
13. M. Yamada, and Y. Ide Surf. Sci. 339 1995 L914
14. J.-K. Yang, M.G. Kang, and H.H. oPark Vacuum 67 2002 161
15. E.D. Roberts, P. Weightman, and C.E. Johnson J. Phys. C 8 1975 1301
16. F. Pérez-Murano, K. Birkelund, K. Morimoto, and J.A. Dagata Appl. Phys. Lett. 75 1999 199
17. Y. Okada, S. Amano, M. Kawabe, and J.S. Harris J. Appl. Phys. 83 1998 7998
18. NIST database. Available from: 〈www.nist.gov/srd/nist71.htm〉
19. G. Mori, M. Lazzarino, D. Ercolani, L. Sorba, A. Locatelli, S. Heun, J. Appl. Phys. (submitted)
20. In GaAs there is the same number of As and Ga atoms. The contribution of the topmost surface layer, where the composition can be unbalanced depending on the surface reconstruction, can be neglected at the kinetic energies considered here. The difference in the actual intensity reflects only the differences in the experimental settings (such as cross section, non-linearity of the analyzer, etc.) that are conserved from clean and oxidized GaAs.
21. D.T. Lide CRC Handbook of Chemistry and Physics 71st edn. 1991 CRC Press Florida 4
22. M. Tello, and R. Garcia Appl. Phys. Lett. 83 2003 2340