Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 143-147

  Yam, V ^a   Le Thanh, V ^a   Debarre D ^a   Zheng, Y ^b   Bouchier, D ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

Capping process; Ge islands; Heterostructures; Interdiffusion; Vertical alignment

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; ULTRAHIGH VACUUM;

CAPPING PROCESSES; GE ISLANDS; HETEROEPITAXIAL GROWTH; VERTICAL ALIGNMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1142292400     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.041     Document Type: Conference Paper

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