Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 324-329

  Stricker, Andreas D ^a   Johnson, Jeffrey B ^a   Freeman, Greg ^a   Rieh, Jae Sung ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

BJT; Collector doping profile; Design methodology; HBT; Hetero bipolar junction transistor; SiGe; TCAD

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

COLLECTOR DOPING PROFILE; DESIGN METHODOLOGY; SIGE; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1142292385     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.060     Document Type: Conference Paper

References (9)

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