Two-dimensional modeling of etched strained-silicon quantum wires

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1251-1257

  Curatola, G ^a   Iannaccone, G ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRON GAS; ETCHING; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NANOTECHNOLOGY; NONLINEAR EQUATIONS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN RATE;

CONDUCTION BAND ANISOTROPY; HOLE GAS; NANOSCALE FIELD EFFECT TRANSISTORS; POISSON-SCHRODINGER EQUATIONS; QUANTUM CONFINEMENT; SELECTIVE ETCHING; STRAINED SILICON QUANTUM WIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 1142292375     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637141     Document Type: Article

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