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Volumn 81, Issue 9, 2002, Pages 1726-1728

Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE QUANTIZATION; DRAIN VOLTAGE; ENERGY SEPARATIONS; HIGH MOBILITY; QUANTUM POINT CONTACT; SI/SIGE; SUB-BANDS;

EID: 79956037487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503157     Document Type: Article
Times cited : (13)

References (16)
  • 8
    • 79958219460 scopus 로고    scopus 로고
    • Proceedings of the 25th International Conference on the Physics of Semiconductors
    • edited by N. Miura and T. Ando (Springer, Berlin)
    • K. Nishiguchi and S. Oda, in Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Proceedings in Physics Vol. 87, edited by N. Miura and T. Ando (Springer, Berlin, 2001), pp. 1037, 1038.
    • (2001) Springer Proceedings in Physics Vol. 87 , vol.1037 , pp. 1038
    • Nishiguchi, K.1    Oda, S.2
  • 16
    • 0040977222 scopus 로고
    • jtJTPLA2 0021-3640
    • A. M. Zagoskin, JETP Lett. 52, 435 (1990). jtp JTPLA2 0021-3640
    • (1990) JETP Lett. , vol.52 , pp. 435
    • Zagoskin, A.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.