Investigation of SiGe-heterostructure nanowires

Nanotechnology

Volumn 12, Issue 2, 2001, Pages 132-135

  Giovine, E ^a   Notargiacomo, A ^a   Di Gaspare, L ^a   Palange, E ^a   Evangelisti, F ^a   Leoni, R ^b   Castellano, G ^b   Torrioli, G ^b   Foglietti, V ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; HETEROJUNCTIONS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; TUNNEL JUNCTIONS;

ELECTRICAL TRANSPORT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0035356861     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/2/312     Document Type: Conference Paper

References (12)