Full-band approaches for the quantum treatment of nanometer-scale MOS structures

Physica B: Condensed Matter

Volumn 314, Issue 1-4, 2002, Pages 345-349

  Sacconi, Fabio ^a   Povolotskyi, Michael ^a   Di Carlo, Aldo ^a   Lugli, Paolo ^a   Städele, Martin ^b   Strahberger, Christian G ^c   Vogl, Peter ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Full band; MOS; Quantization; Tunneling

Indexed keywords

APPROXIMATION THEORY; CAPACITORS; CURRENT DENSITY; ELECTRIC POTENTIAL; HAMILTONIANS; HETEROJUNCTIONS; MATRIX ALGEBRA; QUANTUM THEORY;

QUANTUM TREATMENT;

MOSFET DEVICES;

EID: 0036503542     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01388-6     Document Type: Conference Paper

References (19)