Selenium passivation of GaAs(001): A combined experimental and theoretical study

Journal of Physics Condensed Matter

Volumn 16, Issue 13, 2004, Pages 2187-2206

  Gonzalez C ^a   Benito, I ^a   Ortega, J ^a   Jurczyszyn, L ^a,b   Blanco, J M ^a   Perez R ^a   Flores, F ^a   Kampen, T U ^c   Zahn, D R T ^c   Braun, W ^d  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF WROC AW   (Poland)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; EPITAXIAL GROWTH; ETCHING; FERMI LEVEL; LIGHT EMISSION; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SELENIUM; SEMICONDUCTOR MATERIALS;

ANION EXCHANGE; BAND GAPS; ELECTRONIC PASSIVATION; SURFACE BAND BENDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 11144358406     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/13/001     Document Type: Article

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