Epitaxial growth of CuInS2 on sulphur terminated Si(001)

Applied Physics Letters

Volumn 72, Issue 21, 1998, Pages 2733-2735

  Hahn, Th ^a   Metzner, H ^a   Plikat, B ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000703072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121074     Document Type: Article

References (26)

1. C. H. Henry, J. Appl. Phys. 51, 4494 (1980).
2. H. W. Schock, Sol. Energy Mater. Sol. Cells 34, 19 (1994)
3. R. Scheer, T. Walter, H. W. Schock, M. L. Fearheiley, and H. J. Lewerenz, Appl. Phys. Lett. 63, 3294 (1993).
4. Y. Ogawa, A. Jäger-Waldau, Y. Hashimoto, and K. Ito, Jpn. J. Appl. Phys., Part 2 33, L1775 (1994).
5. R. Klenk, U. Blieske, V. Dieterle, K. Ellmer, S. Fiechter, I. Hengel, A. Jäger-Waldau, T. Kampschulte, Ch. Kaufmann, J. Klaer, M. Ch. Lux-Steiner, D. Braunger, D. Hariskos, M. Ruckh, and H. W. Schock, Sol. Energy Mater. Sol. Cells 49, 349 (1997).
6. T. Nakabayashi, T. Miyazawa, Y. Hashimoto, and K. Ito, Sol. Energy Mater. Sol. Cells 49, 375 (1997).
7. J. Klaer, J. Bruns, R. Henninger, R. Scheer, and D. Bräunig, Proceedings of the 11th International Conference on Ternary and Multinary Compounds, Salford, UK, Sept. 1997 (to be published).
8. J. J. M. Binsma, L. J. Giling, and J. Bloem, J. Cryst. Growth 50, 429 (1980).
9. L. L. Kazmerski, M. S. Ayyagari, and G. A. Sanborn, J. Appl. Phys. 46, 4865 (1975).
10. M. Gossla, Th. Hahn, H. Metzner, J. Conrad, and U. Geyer, Thin Solid Films 268, 39 (1995).
11. H. Metzner, Th. Hahn, J.-H. Bremer, and J. Conrad, Appl. Phys. Lett. 69, 1900 (1996).
12. R. Hunger, R. Scheer, K. Diesner, D. Su, and H. J. Lewerenz, Appl. Phys. Lett. 69, 6010 (1996).
13. H. J. W. Zandvliet, Surf. Sci. 377-379, 1 (1997).
14. E. Kaxiras, Phys. Rev. B 43, 6824 (1991).
15. P. Krüger and J. Pollmann, Phys. Rev. B 47, 1898 (1993).
16. H. Metzner, Th. Hahn, and J.-H. Bremer, Surf. Sci. 377-379, 71 (1997).
17. P. Moriarty, L. Koenders, and G. Hughes, Phys. Rev. B 47, 15950 (1993).
18. A. Papageorgopoulos and M. Kamaratos, Surf. Sci. 352-354, 364 (1996).
19. Analogously, we obtain the quasi-ideal S termination of Si(111) with (4×4) structure only, if the clean surface is exposed to the sulphur beam at or above the temperature of the phase transition (7×7) to (1×1). This phase transition occurs at 1150 K, as was first shown by Lander (Ref. 20).
20. J. J. Lander, Surf. Sci. 1, 125 (1964).
21. J. Fraxedas, S. Ferrer, and F. Comin, Europhys. Lett. 25, 119 (1994).
22. H. Metzner and Th Hahn (unpublished).
23. J. L. Shay and J. H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electric Properties and Application (Pergamon, Oxford, 1975), p. 4.
24. D. S. Su, W. Neumann, R. Hunger, M. Giersig, M. Ch. Lux-Steiner, and H. J. Lewerenz, in Ref. 7.
25. M. H. Bode, J. Appl. Phys. 76, 159 (1994).
26. S.-H. Wei, L. G. Ferreira, and A. Zunger, Phys. Rev. B 45, 2533 (1992).