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Volumn 346, Issue 1-3, 1996, Pages 145-157

Epitaxial growth of Fe on sulphur-passivated GaAs(100): A method for preventing As interdiffusion

Author keywords

Chalcogens; Diffusion and migration; Epitaxy; Gallium arsenide; Metal semiconductor magnetic heterostructures; Molecular beam epitaxy; Single crystal epitaxy; Surface segregation

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; GALLIUM; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); MAGNETIZATION; MONOLAYERS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SULFUR; SURFACE ACTIVE AGENTS;

EID: 0030084293     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00941-8     Document Type: Article
Times cited : (26)

References (23)
  • 23
    • 30244433201 scopus 로고
    • Hiden Analytical Ltd., Warrington
    • Hiden Analytical Ltd., SIMS Manual (Hiden Analytical Ltd., Warrington, 1988).
    • (1988) SIMS Manual


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.