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Volumn 346, Issue 1-3, 1996, Pages 145-157
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Epitaxial growth of Fe on sulphur-passivated GaAs(100): A method for preventing As interdiffusion
a,c a,d a a b b |
Author keywords
Chalcogens; Diffusion and migration; Epitaxy; Gallium arsenide; Metal semiconductor magnetic heterostructures; Molecular beam epitaxy; Single crystal epitaxy; Surface segregation
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Indexed keywords
ARSENIC;
EPITAXIAL GROWTH;
GALLIUM;
HETEROJUNCTIONS;
INTERDIFFUSION (SOLIDS);
MAGNETIZATION;
MONOLAYERS;
PASSIVATION;
SEMICONDUCTING GALLIUM ARSENIDE;
SINGLE CRYSTALS;
SULFUR;
SURFACE ACTIVE AGENTS;
AQUEOUS AMMONIUM SULPHIDE SOLUTION;
CHALCOGENS;
METAL SEMICONDUCTOR MAGNETIC HETEROSTRUCTURES;
SURFACE SEGREGATION;
IRON;
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EID: 0030084293
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)00941-8 Document Type: Article |
Times cited : (26)
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References (23)
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