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Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 619-625

The GaSe/Si(111) interface: A core level study

(6) Amokrane, A a Sebenne C A a Cricenti, A b Ottaviani, C b Proix, F a Eddrief, M a

a UNIVERSITÉ PIERRE ET MARIE CURIE (France)

b CNR (Italy)

Author keywords

Core levels; Heterostructures; Interfaces; Layered compound; Ultraviolet photoemission spectroscopy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

CORE LEVEL SPECTROSCOPY; GALLIUM SELENIDE; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0031654124 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00561-8 Document Type: Article

Times cited : (17)

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