High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes

Electronics Letters

Volumn 38, Issue 14, 2002, Pages 710-712

  Caliman, A ^a   Ramdane, A ^a   Meichenin, D ^a   Manin, L ^a   Sermage, B ^a   Ungaro, G ^a   Travers, L ^a   Harmand, J C ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; STRAIN RATE; WAVEGUIDES;

GALLIUM INDIUM NITRIDE ARSENIDE; GALLIUM NITRIDE ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0037019191     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020412     Document Type: Article

References (6)

1. GalnNAs: A novel material for long-wavelength range laser diodes with excellent high-temperature performance
2. 1.29 μm GalnNAs MQW ridge-waveguide laser diodes with improved performance
3. Low-threshold-current 1.32-μm GalnNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
4. Low threshold lasing operation of narrow stripe oxide-confined GalnNAs/GaAs multiquantum well lasers at 1.28 μm
5. A 1.3 μm GalnNAs/GaAs single-quantum-well laser diode with a high characteristics temperature over 200 K
6. Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers