Hot-carrier degradation mechanism and promising device design of nMOSFETs with nitride sidewall spacer

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 184-188

  Sambonsugi, Yasuhiro ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; NITRIDES; RELIABILITY;

NITRIDE SIDEWALL SPACER;

MOSFET DEVICES;

EID: 0031676894     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670531     Document Type: Conference Paper

References (8)