Strain and composition in self-assembled SiGe islands by Raman spectroscopy

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6772-6774

  Cazayous, M ^a   Groenen, J ^a   Demangeot, F ^a   Sirvin, R ^a   Caumont, M ^a   Remmele, T ^b   Albrecht, M ^b   Christiansen, S ^b   Becker, M ^b   Strunk, H P ^b   Wawra, H ^c  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE COMPOSITION; AVERAGE STRAIN; FINITE-ELEMENT; MICRO-RAMAN; RAMAN SCATTERING SPECTRA; SELF-ASSEMBLED; SI(0 0 1); SIGE ISLANDS; STRAIN PROFILES;

GERMANIUM; RAMAN SCATTERING; SILICON;

RAMAN SPECTROSCOPY;

EID: 0037094827     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469200     Document Type: Article

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