High-temperature stable Ir-Al/n-GaAs Schottky diodes: Effect of the barrier height controlling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 657-661

  Lalinsky T ^a   Osvald, J ^a   Machajdik D ^a   Mozolova Z ^a   Sisolak J ^a   Constantinidis, G ^b   Kobzev, A P ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; INTERFACES (MATERIALS); IRIDIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

AUGER DEPTH PROFILING; BARRIER HEIGHT; INTERFACIAL REACTION STABILITY; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0030110004     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589153     Document Type: Article

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