The optical signature of electron injection in p-(Al)GaN

Superlattices and Microstructures

Volumn 34, Issue 1-2, 2003, Pages 55-62

  Burdett, W C ^a   Lopatiuk, O ^a   Osinsky, A ^b   Pearton, S J ^c   Chernyak, L ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b SVT ASSOCIATES   (United States)

^c University of Florida   (United States)

Author keywords

Cathodoluminescence; Electron injection; GaN; III nitrides

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; DIFFUSION; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON TRAPS; IONIZATION; LUMINESCENCE; PHOTOMULTIPLIERS; SCANNING ELECTRON MICROSCOPY;

ELECTRON INJECTION; FORBIDDEN GAPS; OPTICAL SIGNATURES; THERMAL IONIZATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 10844275683     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.02.019     Document Type: Conference Paper

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