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Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3747-3749

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

(4) Gelhausen, Olef a Klein, H N a,b Phillips, M R a Goldys, E M c

a UNIVERSITY OF TECHNOLOGY SYDNEY (Australia)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c MACQUARIE UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DISSOCIATION; ELECTRON BEAMS; ELECTRON IRRADIATION; HYDROGEN; IMPURITIES; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; MICROANALYSIS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

CATHODOLUMINESCENCE MICROANALYSIS;

GALLIUM NITRIDE;

EID: 0037064987 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1519358 Document Type: Article

Times cited : (32)

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