Enhancement of minority carrier transport in forward biased GaN p-n junction

Electronics Letters

Volumn 37, Issue 14, 2001, Pages 922-923

  Chernyak, L ^a   Nootz, G ^a   Osinsky, A ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Applied Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

ELECTRON BEAM INDUCED CURRENT (EBIC);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035811751     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010605     Document Type: Article

References (5)

1. Fabrication and performance of GaN electronic devices
2. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
3. Minority carrier transport in GaN and related materials
4. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
5. Deep levels and persistent photoconductivity in GaN thin films