Study of temperature dependence for the electron injection-induced effects in GaN

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1633-1635

  Chernyak, Leonid ^a   Burdett, William ^a   Osinsky, Andrei ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; INJECTED ELECTRONS; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE GAN; SAMPLE TEMPERATURE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; GALLIUM NITRIDE;

ELECTRONS;

EID: 79956047695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503407     Document Type: Article

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