Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure

Journal of Applied Physics

Volumn 89, Issue 3, 2001, Pages 1856-1860

  Lin, Yih Yin ^a   Zhang, Yifei ^b   Singh, Jasprit ^a   York, Robert ^c   Mishra, Umesh ^c  

^a University of Michigan   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010078666     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1332425     Document Type: Article

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