Synthesis and characterization of porous silsesquioxane dielectric films

Thin Solid Films

Volumn 473, Issue 2, 2005, Pages 191-195

  Yu, Suzhu ^a   Wong, Terence K S ^a   Hu, Xiao ^b   Pita, Kantisara ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Low dielectric constant; Nanoscale materials; Porous materials; Silsesquioxane; Synthesis and characterization

Indexed keywords

AMINES; CURRENT DENSITY; DIELECTRIC PROPERTIES; HEAT TREATMENT; MATRIX ALGEBRA; PERMITTIVITY; POROUS MATERIALS; PYROLYSIS; SYNTHESIS (CHEMICAL);

LOW DIELECTRIC CONSTANT; NANOSCALE MATERIALS; SILSESQUIOXANE; SYNTHESIS AND CHARACTERIZATION;

DIELECTRIC FILMS;

EID: 10844225488     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.03.040     Document Type: Article

References (16)

1. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, http:// public.itrs.net.
2. D.C. Edelstein, G.A. Sai-Halasz, Y.J. Mii, IBM J. Res. Develop. 39 (1995) 4.
3. J. Wen, B. Dhandapani, S.T. Oyama, G.L. Wilkes, Chem. Mater. 9 (1997) 1968.
4. L. Guo, J.H. Lee, G. Beaucage, J. Non-Cryst. Solids 243 (1999) 61.
5. B. Zhong, H. Meynen, F. Iocopi, K. Weidner, S. Mailhouitre, E. Moyer, C. Bargeron, P. Schalk, A. Peck, V.H. Marleen, K. Maex, in: J. Veteran, D.L. O'Meara, V. Misra, P. Ho (Eds.), MRS Proceedings of Silicon Materials Processing Characterization and Reliability, Materials Research Society, vol. 716, 2002, p. 575.
6. S. Sivoththaman, R. Jeyakumar, L. Ren, A. Nathan, J. Vac. Sci. Technol., A, Vac. Surf. Films 20 (2002) 1149.
7. J.L. Hedrick, R.D. Miller, C.J. Hawker, K.R. Cater, W. Volksen, D.Y. Yoon, M. Trollsås, Adv. Mater. 10 (1998) 1049.
8. Y. Liu, F. Dali, in: J.P. Hummel, K. Endo, W.W. Lee, M.E. Mills, S.-Q. Wang (Eds.), MRS Proceedings of Low-Dielectric Constant Materials V, Materials Research Society, vol. 565, 1999, p. 267.
9. H. Liou, E. Dehate, J. Duel, F. Dall, in: K. Maex, Y.-C. Joo, G.S. Oehrlein, S. Ogawa, J.T. Wetzelp (Eds.), MRS Proceedings of Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Materials Research Society, vol. 612, 2000, p. D5121.
10. Y. Toivola, J. Thurn, R.F. Cook, J. Electrochem. Soc. 149 (2002) (F(9)).
11. A.C. Ferrari, A. Libassi, B.K. Tanner, V. Stolojan, J. Yuan, L.M. Brown, S.E. Rodil, B. Kleinsorge, J. Robertson, Phys. Rev., B 62 (2000) 11089.
12. W.R. Bowen, N. Hilal, R.W. Lovitt, P.M. Williams, J. Membr. Sci. 110 (1996) 233.
13. S. Yu, T.K.S. Wong, K. Pita, X. Hu, J. Vac. Sci. Technol., B 20 (2002) 2036.
14. S. Yu, T.K.S. Wong, K. Pita, X. Hu, V. Ligatchev, J. Appl. Phys. 92 (2002) 3338.
15. Y.K. Siew, PhD thesis, Nanyang Technological University, Singapore, 2003.
16. G. Socrates, Infrared Characteristic Group Frequencies: Tables and Charts, Wiley, Chichester, NY, 2001.