Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 8, 1999, Pages 1051-1055

  Nagayama, Akira ^a   Nishibe, Masatoyo ^a   Inaoka, Takayuki ^a   Mineshima, Nobuhiro ^a  

^a JAPAN RADIO CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; INSERTION LOSSES; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SIGNAL DISTORTION; TELEPHONE SETS;

DIGITAL CELLULAR PHONES; HETEROJUNCTION FIELD EFFECT TRANSISTOR;

SEMICONDUCTOR SWITCHES;

EID: 0033169557     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.777102     Document Type: Article

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