Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss of mobile communication systems

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1510-1514

  Makioka, Satoshi ^a   Anda, Yoshiharu ^a   Miyatsuji, Kazuo ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INSERTION LOSSES; LITHOGRAPHY; PHASE SHIFT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING CIRCUITS;

NONALLOY OHMIC METHOD; PHASE SHIFT LITHOGRAPHY;

GATES (TRANSISTOR);

EID: 0035423610     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936499     Document Type: Article

References (11)

1. Monolithic microwave AlGaAs/InGaAs doped-channel FET switches
2. A 2-V operation resonant-type T/R-switch with low-distortion characteristics for 1.9 GHz PHS
3. A resonant-type GaAs switch IC with low distortion characteristics for 1.9 GHz PHS
4. Antenna switch duplexer for dualband phone (GSM/DCS) using LTCC multilayer technology
5. Microwave switching with GaAs FETs
6. Low-voltage operation GaAs spike-gate power FET with high power-added efficiency
7. High power DPDT antenna switch MMIC for digital cellular phones
8. Low-insertion-loss DP3T MMIC switch for dual-band cellular phones
9. A GaAs high power RF single pole dual throw switch IC for digital mobile communication system
10. 0.15 μm T-shape gate fabrication for GaAs MODFET using phase shift lithography
11. A novel PMMA-swelling technique to fabricate deep sub-micron T-shaped gate MODFETs