Ultrafast carrier dynamics in nitrogen-implanted GaAs

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 361-364

  Sinning, S ^a   Dekorsy, T ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON TRAPS; ION IMPLANTATION; LIGHT REFLECTION; NITROGEN; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

BANDGAP ENERGY; CARRIER RELAXATION; DAMAGE ANALYSIS; PHOTOREFLECTANCE MEASUREMENTS; ULTRAFAST CARRIER DYNAMICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10644280064     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040871     Document Type: Article

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