Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1480-1483

  Coldren, C W ^a   Spruytte, S G ^a   Harris, J S ^a   Larson, M C ^b  

^a STANFORD UNIVERSITY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES;

INDIUM GALLIUM NITROGEN ARSENIDE; VERTICAL-CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034187892     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591408     Document Type: Article

References (8)

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