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Applied Surface Science

Volumn 239, Issue 3-4, 2005, Pages 464-469

Photoemission study of interfacial reactions during annealing of ultrathin yttrium on SiO 2 /Si(1 0 0)

(4) Wang, Z M a Wu, J X a Fang, Q b Zhang, J Y a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

Annealing; High dielectric constant; Photoelectron spectroscopy; Surface and interface; Yttrium

Indexed keywords

ANNEALING; DEPOSITION; PERMITTIVITY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SILICON; SURFACE REACTIONS; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM;

ANNEALING TEMPERATURE; HIGH DIELECTRIC CONSTANT; ROOM TEMPERATURE (RT); SURFACE AND INTERFACE;

SILICA;

EID: 10644265118 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.06.024 Document Type: Article

Times cited : (14)

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