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Volumn 9, Issue SUPPL. 2, 2003, Pages 866-877

Strain measurements at a NiSi/Si interface using STEM-CBED: A quantifaction method for stress relaxation during TEM lamella preparation

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[No Author keywords available]

Indexed keywords


EID: 0041920913     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/s1431927603444334     Document Type: Conference Paper
Times cited : (9)

References (1)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.