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Volumn 9, Issue SUPPL. 2, 2003, Pages 866-877
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Strain measurements at a NiSi/Si interface using STEM-CBED: A quantifaction method for stress relaxation during TEM lamella preparation
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0041920913
PISSN: 14319276
EISSN: None
Source Type: Journal
DOI: 10.1017/s1431927603444334 Document Type: Conference Paper |
Times cited : (9)
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References (1)
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