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Volumn 37, Issue 6, 2001, Pages 591-594

Fine structure of the blue photoluminescence in high-purity hexagonal GaN films

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN DERIVATIVE;

EID: 0345996551     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017564200275     Document Type: Article
Times cited : (4)

References (11)
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    • (1991) Jpn. J. Appl. Phys. , vol.30
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3
  • 2
    • 0001715851 scopus 로고    scopus 로고
    • Observation of Optically-Active Metastable Defects in Undoped GaN Epilayers
    • Xu, S.J., Li, G., and Chue, S.J., Observation of Optically-Active Metastable Defects in Undoped GaN Epilayers, Appl. Phys. Lett., 1998, vol. 72, pp. 2451-2455.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 2451-2455
    • Xu, S.J.1    Li, G.2    Chue, S.J.3
  • 4
    • 3442896012 scopus 로고    scopus 로고
    • Nature of the 2.8 eV Photoluminescence Band in Mg Doped GaN
    • Kaufmann, U., Kunzer, M., and Maier, M., Nature of the 2.8 eV Photoluminescence Band in Mg Doped GaN, Appl. Phys. Lett., 1998, vol. 72, pp. 1326-1330.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1326-1330
    • Kaufmann, U.1    Kunzer, M.2    Maier, M.3
  • 5
    • 0031559742 scopus 로고    scopus 로고
    • The Process and Efficiency of Ultraviolet Generation from Gallium Nitride Blue Light Emitting Diodes
    • Basrur, J.P., Choa, F.S., and Liu, P.L., The Process and Efficiency of Ultraviolet Generation from Gallium Nitride Blue Light Emitting Diodes, Appl. Phys. Lett., 1997, vol. 71, pp. 1385-1387.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 1385-1387
    • Basrur, J.P.1    Choa, F.S.2    Liu, P.L.3
  • 6
    • 0033813857 scopus 로고    scopus 로고
    • Substrate Effects on the Structure and Optical Properties of GaN Epitaxial Films
    • Kaiser, U., Gruzintsev, A.N., Khodos, I.I., and Richter, W., Substrate Effects on the Structure and Optical Properties of GaN Epitaxial Films, Neorg. Mater., 2000, vol. 36, no. 6, pp. 720-724
    • (2000) Neorg. Mater. , vol.36 , Issue.6 , pp. 720-724
    • Kaiser, U.1    Gruzintsev, A.N.2    Khodos, I.I.3    Richter, W.4
  • 7
    • 7744241138 scopus 로고    scopus 로고
    • Engl. Transl.
    • [Inorg. Mater. (Engl. Transl.), vol. 36, no. 6, pp. 595-598].
    • Inorg. Mater. , vol.36 , Issue.6 , pp. 595-598
  • 8
    • 0001592492 scopus 로고    scopus 로고
    • Effect of Buffer Layer and Substrate Polarity on the Growth by Molecular Beam Epitaxy of GaN
    • Hamdani, F., Botchkarev, A.E., and Tany, H., Effect of Buffer Layer and Substrate Polarity on the Growth by Molecular Beam Epitaxy of GaN, Appl. Phys. Lett., 1997, vol. 71, pp. 3111-3115.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 3111-3115
    • Hamdani, F.1    Botchkarev, A.E.2    Tany, H.3
  • 9
    • 21544461610 scopus 로고
    • Large-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor Device Technologies
    • Morkos, H., Strite, S., and Gao, G.B., Large-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor Device Technologies, J. Appl. Phys., 1994, vol. 76, pp. 1363-1391.
    • (1994) J. Appl. Phys. , vol.76 , pp. 1363-1391
    • Morkos, H.1    Strite, S.2    Gao, G.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.