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Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 257-263

Raman spectroscopic studies of the formation processes of cobalt suicide thin films

(8) Liu, F M a,d Ye, J H b Ren, B a Yang, Z L a Liao, Y Y a See, A c Chan, L c Tian, Z Q a,b

a XIAMEN UNIVERSITY (China)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

d IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

Annealing; Cobalt; Growth mechanism; Raman scattering; Silicides

Indexed keywords

FREQUENCY RANGE; GROWTH MECHANISM; SILICIDES; ULTRA-LARGE-SCALE INTEGRATED (ULSI) DEVICES;

ANNEALING; COMPOSITION; HIGH TEMPERATURE EFFECTS; IMPURITIES; PHASE TRANSITIONS; RAMAN SCATTERING; THIN FILMS;

COBALT COMPOUNDS;

EID: 10644222127 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.06.111 Document Type: Article

Times cited : (19)

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