Effect of rapid thermal annealing temperature on the formation of CoSi studied by X-ray photoelectron spectroscopy and micro-Raman spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 II, 2000, Pages 1690-1693

  Zhao, Jin ^a   Ballast, Lynette K ^a   Hossain, Tim Z ^a   Trostel, Rebecca E ^a   Bridgman, William C ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; PEROXIDES; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SILICON WAFERS; SINGLE CRYSTALS; SULFURIC ACID; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

COBALT SILICIDE;

COBALT ALLOYS;

EID: 0034225160     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582408     Document Type: Article

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