A selective growth of III-nitride by MOCVD for a buried-ridge type structure

Journal of Crystal Growth

Volumn 226, Issue 1, 2001, Pages 73-78

  Yang, Min ^a   Cho, Meoungwhan ^a   Kim, Chinkyo ^a   Yi, Jaehyung ^a   Jeon, Jina ^a   Khym, Sungwon ^a   Kim, Minhong ^a   Choi, Yoonho ^a   Leem, Shi Jong ^a   Lee, Yong Hee ^b  

^a LG Electronics Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B3. Laser diodes

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

LATERAL EPITAXIAL OVERGROWTH (LEO) SUBSTRATES; SELECTIVE EPITAXY;

SEMICONDUCTOR LASERS;

EID: 0035368655     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01021-1     Document Type: Article

References (11)