Influence of parasitic capacitances on the performance of passivated InAlAs/InGaAs HEMTs in the millimeter wave range

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 646-649

  Schuler, O ^a   Fourre, H ^a   Fauquembergue, R ^a   Cappy, A ^a  

^a Inst d'Electronique et de   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COATINGS; DIELECTRIC MATERIALS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

PARASITIC CAPACITANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029697621     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)