Gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors formed by wet recess etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5052-5056

  Ohshima, Tomoyuki ^a   Yoshida, Masaaki ^a   Shigemasa, Ryoji ^a   Tsunotani, Masanori ^a   Kimura, Tamotsu ^a  

^a Oki Electric Industry   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GATES (TRANSISTOR); ION IMPLANTATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GATE ORIENTATION DEPENDENCE; WET RECESS ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034268367     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5052     Document Type: Article

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