Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

Thin Solid Films

Volumn 435, Issue 1-2, 2003, Pages 139-144

  Lee, Jin Hee ^a   Yoon, Hyung Sup ^a   Shim, Jae Yeob ^a   Kim, Hae Chun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Dry etching; HEMTs; Inductively coupled plasma

Indexed keywords

DRY ETCHING; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; FABRICATION; FREQUENCIES; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

OSCILLATION FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038347152     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00405-X     Document Type: Conference Paper

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