Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 769-774

  Moran, D ^a   Boyd, E ^a   McLelland, H ^a   Elgaid, K ^a   Chen, Y ^a   Macintyre, D S ^a   Thoms, S ^a   Stanley, C R ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

GaAs pHEMT; Nanoimprint; Ohmic contact; Self aligned; Succinic acid

Indexed keywords

ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

NANOIMPRINTING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038696458     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00137-0     Document Type: Conference Paper

References (5)

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