Spin-dependent tunnelling through epitaxial GaAs(001) and (110) barriers

Journal of Physics Condensed Matter

Volumn 16, Issue 48, 2004, Pages

  Zenger, Marcus ^a   Moser, Juergen ^a   Kreuzer, Stephan ^a   Wegscheider, Werner ^a   Weiss, Dieter ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRODES; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; GOLD; HETEROJUNCTIONS; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SENSITIVITY ANALYSIS;

SPIN POLARIZATION; TUNNELING ELEMENTS; TUNNELING MAGNETORESISTANCE (TMR); WET CHEMICAL ETCHING;

THIN FILMS;

EID: 10444238162     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/48/057     Document Type: Conference Paper

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