Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

Journal of Applied Physics

Volumn 89, Issue 11 II, 2001, Pages 6751-6753

  Kreuzer, Stephan ^a   Wegscheider, Werner ^a,b   Weiss, Dieter ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356875     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1359219     Document Type: Article

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17. At 300 K no special precaution was taken to avoid exposure of the samples to daylight illumination. Although the tunnel junction itself is covered by 200 nm Au, an effect due to the creation of free carriers in the otherwise isolating GaAs next to the junction cannot be excluded. Thus, the temperature dependence in the resistance may be even weaker, but the general interpretation remains unchanged.