Magnetoresistance in Fe/ZnSe/Fe planar junctions

Journal of Magnetism and Magnetic Materials

Volumn 226-230, Issue PART I, 2001, Pages 917-919

  Mosca, D H ^a   George, J M ^b   Maurice, J L ^b   Fert, A ^b   Eddrief, M ^c   Etgens, V H ^c  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b Thales Research K Technology Domaine de Corbeville   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Heterostructures; Magnetoresistance; Semiconductors ferromagnetic; Tunneling

Indexed keywords

ELECTRON TUNNELING; GALVANOMAGNETIC EFFECTS; HETEROJUNCTIONS; MAGNETIC MOMENTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

FE LAYER; LOW TEMPERATURES; MAGNETORESISTANCE MEASUREMENTS; PLANAR JUNCTIONS; POSITIVE MAGNETORESISTANCE; QUADRATIC FIELDS; SEMICONDUCTORS-FERROMAGNETIC; TUNNELING MAGNETORESISTANCE;

TUNNELLING MAGNETORESISTANCE;

EID: 33748704724     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(00)01062-3     Document Type: Article

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