SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 7-14

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

(6) Du, A Y a Li, M F a Chong, T C a Xu, S J a Zhang, Z b Yu, D P b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Dislocations; GaAs heterostructures; Lattice

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASTIC FLOW; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

DODSON-TSAO PLASTIC FLOW; HOLE TRAP LEVELS; MOLE FRACTIONS; NONRADIATIVE RECOMBINATION CENTERS; THREADING DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0031355760 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00314-3 Document Type: Article

Times cited : (12)

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